Cite
MLA Citation
J G Gluschke et al.. “Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.” Nanotechnology, vol. 30, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100108806288.0x000056
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J G Gluschke et al.. “Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.” Nanotechnology, vol. 30, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100108806288.0x000056