Cite
APA Citation
Gluschke, J. G., Seidl, J., Burke, A. M., Lyttleton, R. W., Carrad, D. J., Ullah, A. R., Fahlvik, S., Lehmann, S., Linke, H., & Micolich, A. P. (2019). achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. Nanotechnology, 30, . http://access.bl.uk/ark:/81055/vdc_100108806288.0x000056