Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. (14th December 2018)

• Record Type: Journal Article
• Authors: Gluschke, J G; Seidl, J; Burke, A M; Lyttleton, R W; Carrad, D J; Ullah, A R; Fahlvik, S; Lehmann, S; Linke, H; Micolich, A P
• Is Part Of: Nanotechnology. Volume 30:Number 6(2019)
• Publication Date: 2018-12-14
• Subjects: nanowire -- gate-all-around -- GAA -- field-effect transistor -- nanowire alignment; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaf1e5
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec −1 at 77 K for a 150 nm gate length.