Cite
HARVARD Citation
Gluschke, J. et al. (2019). Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. Nanotechnology. p. . [Online].
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Gluschke, J. et al. (2019). Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. Nanotechnology. p. . [Online].