Cite
MLA Citation
Prithviraj Deshmukh et al.. “Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1–xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 μm.” Semiconductor science and technology, vol. 33, n.d., p. . http://access.bl.uk/ark:/81055/vdc_100087551462.0x00004a