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APA Citation
Deshmukh, P., Sharma, M., Nalamati, S., Reynolds, C. L., Liu, Y., & Iyer, S. (n.d.). molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1–xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 μm. Semiconductor science and technology, 33, . http://access.bl.uk/ark:/81055/vdc_100087551462.0x00004a