A review: aluminum nitride MEMS contour-mode resonator*Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32). (October 2016)
- Record Type:
- Journal Article
- Title:
- A review: aluminum nitride MEMS contour-mode resonator*Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32). (October 2016)
- Main Title:
- A review: aluminum nitride MEMS contour-mode resonator*Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).
- Authors:
- Hou 侯, Yunhong 云虹
Zhang 张, Meng 萌
Han 韩, Guowei 国威
Si 司, Chaowei 朝伟
Zhao 赵, Yongmei 咏梅
Ning 宁, Jin 瑾 - Abstract:
- Abstract: Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.
- Is Part Of:
- Journal of semiconductors. Volume 37:Number 10(2016:Oct.)
- Journal:
- Journal of semiconductors
- Issue:
- Volume 37:Number 10(2016:Oct.)
- Issue Display:
- Volume 37, Issue 10 (2016)
- Year:
- 2016
- Volume:
- 37
- Issue:
- 10
- Issue Sort Value:
- 2016-0037-0010-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-10
- Subjects:
- 85.30.−z
MEMS contour-mode resonator -- AlN -- magnetron sputtering -- inductively coupled plasma (ICP) etching -- the temperature stability -- quality factor (Q)
1230B
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/1674-4926/ ↗
http://www.iop.org/EJ/journal/jos ↗
http://www.iop.org/ ↗ - DOI:
- 10.1088/1674-4926/37/10/101001 ↗
- Languages:
- English
- ISSNs:
- 1674-4926
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 9199.xml