Subject: 621.38152 - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject 621.38152

1. "Giant" red and green core/shell quantum dots with high color purity and photostability. (March 2016)

Authors:: Huang, Bo; Xu, Ruilin; Zhuo, Ningze; Zhang, Lei; Wang, Haibo; Cui, Yiping; Zhang, Jiayu
Journal:: Superlattices and microstructures
Issue:: Volume 91(2016)
Page Start:: 201
Record Type:: Journal Article
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2. (Ba1−xNax)F(Zn1−xMnx)Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping. (1st November 2022)

Authors:: Zhao, Xueqin; Dong, Jinou; Fu, Licheng; Gu, Yilun; Zhang, Rufei; Yang, Qiaolin; Xie, Lingfeng; Tang, Yinsong; Ning, Fanlong
Journal:: Journal of semiconductors
Issue:: Volume 43:Number 11(2022)
Page Start:
Record Type:: Journal Article
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3. (Ca, K)(Zn, Mn)2As2: Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn2As2. (1st July 2022)

Authors:: Dong, Jinou; Zhao, Xueqin; Fu, Licheng; Gu, Yilun; Zhang, Rufei; Yang, Qiaolin; Xie, Lingfeng; Ning, Fanlong
Journal:: Journal of semiconductors
Issue:: Volume 43:Number 7(2022)
Page Start:
Record Type:: Journal Article
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4. (In, Ga, Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range. (20th January 2017)

Authors:: Ledentsov, N N; Shchukin, V A; Shernyakov, Yu M; Kulagina, M M; Payusov, A S; Gordeev, N Yu; Maximov, M V; Cherkashin, N A
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 2(2017:Feb.)
Page Start:
Record Type:: Journal Article
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5. (Li, F) co-doped ZnO: Optoelectronic devices applications. (September 2020)

Authors:: Khuili, M.; Fazouan, N.; El Makarim, H. Abou; Atmani, E.H.; Abbassi, A.; Rai, D.P.
Journal:: Superlattices and microstructures
Issue:: Volume 145(2020)
Page Start:
Record Type:: Journal Article
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6. 0D/2D Ag3PO4/biotite nanocomposites for efficient visible-light-driven tetracycline hydrochloride degradation. (1st November 2022)

Authors:: Hua, Yuxiang; Liu, Xueqin; Li, Pengfei; Hu, Chenyao; Chen, Shenming; Liu, Xiaoheng
Journal:: Materials science in semiconductor processing
Issue:: Volume 150(2022)
Page Start:
Record Type:: Journal Article
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7. 1.06 μm high-power InGaAs/GaAsP quantum well lasers. (November 2017)

Authors:: Wang, Haili; Zhong, Li; Hou, Jida; Liu, Suping; Ma, Xiaoyu
Journal:: Journal of semiconductors
Issue:: Volume 38:Number 11(2017:Nov.)
Page Start:
Record Type:: Journal Article
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8. 1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks. (18th August 2015)

Authors:: Kwon, Oh Kee; Lee, Chul Wook; Leem, Young Ahn; Kim, Ki Soo; Oh, Su Hwan; Nam, Eun Soo
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 10(2015:Oct.)
Page Start:
Record Type:: Journal Article
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9. 1/f noise in amorphous Sb2Te3 for energy-efficient stochastic synapses in neuromorphic computing. (22nd October 2021)

Authors:: Kang, Deokyoung; Jang, Suyeon; Choi, Sejeung; Kim, Sangbum
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 12(2021)
Page Start:
Record Type:: Journal Article
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10. 1064 nm InGaAsP multi-junction laser power converters. (June 2020)

Authors:: Yin, Jiajing; Sun, Yurun; Yu, Shuzhen; Zhao, Yongming; Li, Rongwei; Dong, Jianrong
Journal:: Journal of semiconductors
Issue:: Volume 41:Number 6(2020)
Page Start:
Record Type:: Journal Article
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