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Wang 王, Y. 有., Ma 马, Q. 倩., Zheng 郑, L. 丽., Liu 刘, W. 文., Ding 丁, S. 士., Lu 卢, H. 红., & Zhang 张, W. 卫. (n.d.). influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric*Supported by the National Natural Science Foundation of China under Grant Nos 61474027 and 61376008.. Chinese physics letters, 33, . http://access.bl.uk/ark:/81055/vdc_100036337848.0x00002a