Cite
MLA Citation
Akinori Ubukata et al.. “High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor.” Physica status solidi, vol. 10, no. 11, n.d., pp. 1353–1356. http://access.bl.uk/ark:/81055/vdc_100024886092.0x000015