High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor. Issue 11 (21st October 2013)

• Record Type: Journal Article
• Authors: Ubukata, Akinori; Yano, Yoshiki; Yamaoka, Yuya; Kitamura, Yuichiro; Tabuchi, Toshiya; Matsumoto, Koh; Yamaguchi, Hiroshi; Kumakura, Kazuhide
• Is Part Of: Physica status solidi. Volume 10:Issue 11(2013:Nov.)
• Page Start: 1353
• Page End: 1356
• Publication Date: 2013-10-21
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300255
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We have developed a large‐scale metal‐organic vapor phase epitaxy (MOVPE) reactor. The growth rates of AlN and AlGaN were compared with those calculated using the parasitic chemical reaction model. The calculated results were in good agreement with the experimental results over the entire 8″ wafer. To experimentally investigate the extent of the gas‐phase prereaction between the precursors and ammonia, the results of epitaxy were compared with those for a 6″‐type reactor. The growth of AlN and AlGaN at relatively high rates without any significant gas‐phase prereaction was demonstrated. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>