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APA Citation
Ubukata, A., Yano, Y., Yamaoka, Y., Kitamura, Y., Tabuchi, T., Matsumoto, K., Yamaguchi, H., & Kumakura, K. (n.d.). high growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor. Physica status solidi, 10(11), 1353–1356. http://access.bl.uk/ark:/81055/vdc_100024886092.0x000015