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HARVARD Citation
Ubukata, A. et al. (n.d.). High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor. Physica status solidi. 10 (11), pp. 1353-1356. [Online].
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Ubukata, A. et al. (n.d.). High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor. Physica status solidi. 10 (11), pp. 1353-1356. [Online].