111. A 3.9 ppm/○C, 31.5 ppm/V ultra-low-power subthreshold CMOS-only voltage reference. (February 2020) Authors: Liao, Jinrui; Zeng, Yanhan; Li, Jintao; Yang, Jingci; Tan, Hong-Zhou Journal: Microelectronics journal Issue: Volume 96(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
112. A 30Gbps power-efficient dual-loop adaptive equalizer in 0.13 μm SiGe BiCMOS technology. (June 2020) Authors: Li, Jiquan; Chen, Yingmei; Chen, Lufeng; Guo, Chao Journal: Microelectronics journal Issue: Volume 100(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
113. A 30 V rail-to-rail operational amplifier. Issue 10 (October 2015) Authors: Wang, Chua-Chin; Tsai, Tsung-Yi; Lu, Wen-Je; Chen, Chih-Lin; Wu, Yi-Lun Journal: Microelectronics journal Issue: Volume 46:Issue 10(2015) Page Start: 911 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
114. A 325-μW step-16 digital-sensor based on dual-delay-chain in 180-nm CMOS. (October 2022) Authors: Gan, Jie; Zhao, Xu; Hu, Jiajie; Yang, Yuanhui; Zhu, Linsong; Li, Zonglin; Lu, Jiahao; Liu, Dongsheng Journal: Microelectronics journal Issue: Volume 128(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
115. A 32 Gb/s PAM-16 TX and ADC-Based RX AFE with 2-tap embedded analog FFE in 28 nm FDSOI. (February 2021) Authors: Celik, Firat; Akkaya, Ayca; Leblebici, Yusuf Journal: Microelectronics journal Issue: Volume 108(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
116. A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS. (December 2022) Authors: Lai, Mingche; Zhang, Geng; Lv, Fangxu; Zheng, Xuqiang; Wang, Heming; Lv, Dongbin; Xu, Chaolong; Qi, Xingyun Journal: Microelectronics journal Issue: Volume 130(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
117. A 352nW, 30 ppm/°C all MOS nano ampere current reference circuit. (November 2017) Authors: Chouhan, Shailesh singh; Halonen, Kari Journal: Microelectronics journal Issue: Volume 69(2017) Page Start: 45 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
118. A 433/2400 MHz dual-band frequency synthesizer with glitch-free phase-interpolated frequency divider and hybrid post-synthesizer. (October 2021) Authors: Tang, Xiaoke; Zhao, Xu; Hu, Ang; Liu, Dongsheng; Jin, Zirui Journal: Microelectronics journal Issue: Volume 116(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
119. A 4H–SiC double trench MOSFET with split gate and integrated MPS diode. (October 2022) Authors: Peng, Disen; Feng, Quanyuan Journal: Microelectronics journal Issue: Volume 128(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
120. A 5-bit 1-GS/s binary-search ADC in 90-nm CMOS. (May 2017) Authors: Chung, Yung-Hui; Tsai, Cheng-Hsun; Yeh, Hsuan-Chih Journal: Microelectronics journal Issue: Volume 63(2017) Page Start: 131 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗