A 352nW, 30 ppm/°C all MOS nano ampere current reference circuit. (November 2017)

• Record Type: Journal Article
• Authors: Chouhan, Shailesh singh; Halonen, Kari
• Is Part Of: Microelectronics journal. Volume 69(2017)
• Page Start: 45
• Page End: 52
• Publication Date: 2017-11
• Subjects: Reference circuits -- Current reference circuit -- IoT -- Ultra low power -- Nanoampere -- Temperature -- Beta multiplier; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2017.09.006
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this work, an ultra low power all-MOSFET based current reference circuit, developed in 0.18 µm CMOS technology, is presented. The proposed circuit is based on the classical resistor-less beta multiplier circuit with an additional temperature compensation feature. The circuit is capable of providing the reference current in a nanoampere range for the supply voltage ranging from 1 V to 2 V in the industrial temperature range of −40 °C to 85 °C. The measurements were performed on 10 prototypes. The measured mean value of the reference current is 58.7 nA with a mean temperature coefficient value of 30 ppm/°C. In addition, the measured mean line regulation is 3.4%/V in the given supply voltage range. The total current consumption of the circuit is 352 nA and the chip area is 0.036 mm 2 .