1. Memristor interpretations based on constitutive relations. (October 2017) Authors: Wu, Wei; Deng, Ning Journal: Journal of semiconductors Issue: Volume 38:Number 10(2017:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Equivalent radiation source of 3D package for electromagnetic characteristics analysis *Project supported by the National Nature Science Foundation of China (No. 61274110). (October 2017) Authors: Li, Jun; Wei, Xingchang; Shu, Yufei Journal: Journal of semiconductors Issue: Volume 38:Number 10(2017:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025). (October 2020) Authors: Song 宋, Wenqiang 文强; Hou 侯, Fei 飞; Du 杜, Feibo 飞波; Liu 刘, Zhiwei 志伟; Liou 刘, Juin J. 俊杰 Journal: Chinese physics B Issue: Volume 29:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Dispersion characteristics of nanometer-scaled silicon nitride suspended membrane waveguides*Project supported by the National Natural Science Foundation of China (Nos. 61435002, 61527823 61321063). (November 2016) Authors: Bian 边, Dandan 丹丹; Lei 雷, Xun 勋; Chen 陈, Shaowu 少武 Journal: Journal of semiconductors Issue: Volume 37:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope. (January 2016) Authors: Cooper, David; Denneulin, Thibaud; Bernier, Nicolas; Béché, Armand; Rouvière, Jean-Luc Journal: Micron Issue: Volume 80(2016:Jan.) Page Start: 145 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices. (27th March 2015) Authors: Wu 吴, Hua-Qiang 华强; Wu 吴, Ming-Hao 明昊; Li 李, Xin-Yi 辛毅; Bai 白, Yue 越; Deng 邓, Ning 宁; Yu 余, Zhi-Ping 志平; Qian 钱, He 鹤 Journal: Chinese physics B Issue: Volume 24:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope. (January 2016) Authors: Cooper, David; Denneulin, Thibaud; Bernier, Nicolas; Béché, Armand; Rouvière, Jean-Luc Journal: Micron Issue: Volume 80(2016:Jan.) Page Start: 145 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines*Project supported by National Natural Science Foundation of China (No. 61674036). (June 2017) Authors: Wang, Hansheng; He, Weiliang; Zhang, Minghui; Tanh, Lu Journal: Journal of semiconductors Issue: Volume 38:Number 6(2017:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Electro-magnetic interpretation of four-element torus. (November 2017) Authors: Wu, Wei; Deng, Ning Journal: Journal of semiconductors Issue: Volume 38:Number 11(2017:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Dynamic electrostatic-discharge path investigation relied on different impact energies in metal–oxide–semiconductor circuits. (1st April 2023) Authors: Xie 谢, Tian-Tian 田田; Wang 王, Jun 俊; Du 杜, Fei-Bo 飞波; Yu 郁, Yang 扬; Cai 蔡, Yan-Fei 燕飞; Feng 冯, Er-Yuan 二媛; Hou 侯, Fei 飞; Liu 刘, Zhi-Wei 志伟 Journal: Chinese physics B Issue: Volume 32:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗