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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025). (October 2020)
Record Type:
Journal Article
Title:
Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025). (October 2020)
Main Title:
Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications*Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025).
Abstract : A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current ( i.e., 3.82 A) as well as a higher holding voltage ( i.e., 10.21 V) than the MLSCR.