Journal: Superlattices and microstructures - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Superlattices and microstructures

11. 320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice. (November 2017)

Authors:: Sun, Yaoyao; Wang, Guowei; Han, Xi; Xiang, Wei; Jiang, Dongwei; Jiang, Zhi; Hao, Hongyue; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan
Journal:: Superlattices and microstructures
Issue:: Volume 111(2017)
Page Start:: 783
Record Type:: Journal Article
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12. 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars. (August 2016)

Authors:: Yao, Jia-fei; Guo, Yu-feng; Xia, Tian; Zhang, Jun; Lin, Hong
Journal:: Superlattices and microstructures
Issue:: Volume 96(2016)
Page Start:: 95
Record Type:: Journal Article
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13. 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars. (August 2016)

Authors:: Yao, Jia-fei; Guo, Yu-feng; Xia, Tian; Zhang, Jun; Lin, Hong
Journal:: Superlattices and microstructures
Issue:: Volume 96(2016)
Page Start:: 95
Record Type:: Journal Article
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14. 3D contour fluorescence spectroscopy with Brus model: Determination of size and band gap of double stranded DNA templated silver nanoclusters. (January 2018)

Authors:: Kamalraj, Devaraj; Yuvaraj, Selvaraj; Yoganand, Coimbatore Paramasivam; Jaffer, Syed S.
Journal:: Superlattices and microstructures
Issue:: Volume 113(2018)
Page Start:: 283
Record Type:: Journal Article
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15. 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate. (October 2018)

Authors:: Wang, Xi; Pu, Hongbin; Liu, Qing; An, Liqi
Journal:: Superlattices and microstructures
Issue:: Volume 122(2018)
Page Start:: 1
Record Type:: Journal Article
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16. 4H-SiC superjunction trench MOSFET with reduced saturation current. (January 2019)

Authors:: He, Qingyuan; Luo, Xiaorong; Liao, Tian; Wei, Jie; Deng, Gaoqiang; Sun, Tao; Fang, Jian; Yang, Fei
Journal:: Superlattices and microstructures
Issue:: Volume 125(2019)
Page Start:: 58
Record Type:: Journal Article
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17. 4H-SiC trench IGBT with lower on-state voltage drop. (March 2017)

Authors:: Liu, Yan-juan; Wang, Ying; Yu, Cheng-hao; Fei-Cao,
Journal:: Superlattices and microstructures
Issue:: Volume 103(2017)
Page Start:: 56
Record Type:: Journal Article
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18. 4H-SiC trench MOSFET with splitting double-stacked shielded region. (October 2018)

Authors:: Yang, Tongtong; Bai, Song; Huang, Runhua
Journal:: Superlattices and microstructures
Issue:: Volume 122(2018)
Page Start:: 419
Record Type:: Journal Article
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19. A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction. (November 2018)

Authors:: Wu, Lijuan; Lei, Bing; Yang, Hang; Song, Yue; Zhang, Yinyan
Journal:: Superlattices and microstructures
Issue:: Volume 123(2018)
Page Start:: 201
Record Type:: Journal Article
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20. A 600V PiN diode with partial recessed anode and double-side Schottky engineering for fast reverse recovery. (April 2019)

Authors:: Li, Shaohong; Zhang, Long; Zhu, Jing; Tang, Qingxi; Sun, Ling; Wang, Hao; Tong, Xin; Sun, Weifeng
Journal:: Superlattices and microstructures
Issue:: Volume 128(2019)
Page Start:: 56
Record Type:: Journal Article
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