4H-SiC trench IGBT with lower on-state voltage drop. (March 2017)

• Record Type: Journal Article
• Authors: Liu, Yan-juan; Wang, Ying; Yu, Cheng-hao; Fei-Cao,
• Is Part Of: Superlattices and microstructures. Volume 103(2017)
• Page Start: 56
• Page End: 63
• Publication Date: 2017-03
• Subjects: 4H-SiC -- Trench-gate IGBT -- On-state voltage drop -- Trade-off curve; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.11.036
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P + shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure. The simulation results indicate that the proposed structure exhibits an improvement in the following. Firstly, the on-state voltage drop is reduced by 32.75%. Secondly, the differential specific on-resistance is reduced by 42.33%. Finally, under the same on-state voltage drop, the turn-off energy is reduced more than 50.00%. At the end of the paper, it is explored that what effects the physical parameter of the P + shielding region in the proposed structure have on the steady state performances. Graphical abstract: Highlights: A 4H-SiC trench IGBT with an emitter heavy doping trench P + field shielding region (E-P + -TIGBT) is designed and investigated. E-P + -TIGBT offers a lower on-state voltage drop and a lower differential specific on-resistance. It offers an improved trade-off curve between the on-state voltage drop and the turn-off energy loss.