Journal: Semiconductor science and technology - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Semiconductor science and technology

61. A new approach to model sensitivity of graphene-based gas sensors. (20th March 2015)

Authors:: Ghadiry, Mahdiar; Ismail, Razali; Naraghi, Bahareh; Taheri Abed, Sanaz; Kavosi, Daruosh; Fotovatikhah, Farnaz
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 4(2015:Apr.)
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62. A new approach to RF small-signal modeling of MOSFETs. (22nd October 2019)

Authors:: Jawa, Himani; Dutta, Aloke K
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 11(2019)
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63. A new bias scheme for a low power consumption ReRAM crossbar array. (15th July 2016)

Authors:: Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon
Journal:: Semiconductor science and technology
Issue:: Volume 31:Number 8(2016:Aug.)
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64. A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach. (10th October 2016)

Authors:: González-Cordero, G; Roldan, J B; Jiménez-Molinos, F; Suñé, J; Long, S; Liu, M
Journal:: Semiconductor science and technology
Issue:: Volume 31:Number 11(2016:Nov.)
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65. A new coupling mechanism between two graphene electron waveguides for ultrafast switching. (15th February 2018)

Authors:: Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 3(2018:Mar.)
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66. A new lattice-matched In0.17Al0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application. (9th October 2019)

Authors:: Li, Xiusheng; Yang, Lin'An; Ma, Xiaohua; Hao, Yue
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 11(2019)
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67. A new method to enhance organic photodetectors active layer trap doping by blending doping. (6th January 2020)

Authors:: An, Tao; Liu, Xinying; Ma, Jianping
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 2(2020)
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Record Type:: Journal Article
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68. A new model on recombination dynamics of polar InGaN/GaN MQW LED and IQE measurement. (31st March 2020)

Authors:: Ma, Cang Min; Tian, Ming; Li, Peng; Mo, Jun Sen; Niu, Wen Long; Lin, Tao; Feng, Zhe Chuan
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 5(2020)
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69. A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. (16th May 2016)

Authors:: Xu, Yue; Xiang, Ping; Xie, Xiaopeng; Huang, Yang
Journal:: Semiconductor science and technology
Issue:: Volume 31:Number 6(2016:Jun.)
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70. A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors. (13th January 2021)

Authors:: Banchhor, Shashank; Chauhan, Nitanshu; Anand, Bulusu
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 3(2021)
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