A new lattice-matched In0.17Al0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application. (9th October 2019)

• Record Type: Journal Article
• Authors: Li, Xiusheng; Yang, Lin'An; Ma, Xiaohua; Hao, Yue
• Is Part Of: Semiconductor science and technology. Volume 34:Number 11(2019)
• Publication Date: 2019-10-09
• Subjects: lattice-matched -- heterostructure -- IMPATT diode -- terahertz; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab4786
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Simulation studies are made on the dc and microwave performance of a novel lattice-matched In0.17 Al0.83 N/GaN heterostructure impact avalanche transit time (IMPATT) diode designed at the low-end terahertz frequency of 220 GHz. The electric field, breakdown voltage, rf output power and the dc-to-rf conversion efficiency of the heterostructure IMPATT diodes are compared with the GaN homostructure IMPATT diode. The results show that, a more localized avalanche region width is obtained for the heterostructure IMPATT diodes. With value of 45 nm of the In0.17 Al0.83 N layer width, the heterostructure IMPATT diode gives the highest efficiency (15.4%) with moderate rf output power density (1.62 MW cm −2 ), and the lowest Q -factor (6.57) as compared to other heterostructure and homostructure IMPATT diodes.