A new bias scheme for a low power consumption ReRAM crossbar array. (15th July 2016)

• Record Type: Journal Article
• Authors: Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon
• Is Part Of: Semiconductor science and technology. Volume 31:Number 8(2016:Aug.)
• Publication Date: 2016-07-15
• Subjects: nonvolatile memory -- crossbar array -- ReRAM -- power consumption -- read margin; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/8/085009
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app /12 and 7 × V app /12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.