Journal: Semiconductor science and technology - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Semiconductor science and technology

1. (In, Ga, Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range. (20th January 2017)

Authors:: Ledentsov, N N; Shchukin, V A; Shernyakov, Yu M; Kulagina, M M; Payusov, A S; Gordeev, N Yu; Maximov, M V; Cherkashin, N A
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 2(2017:Feb.)
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Record Type:: Journal Article
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2. 1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks. (18th August 2015)

Authors:: Kwon, Oh Kee; Lee, Chul Wook; Leem, Young Ahn; Kim, Ki Soo; Oh, Su Hwan; Nam, Eun Soo
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 10(2015:Oct.)
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Record Type:: Journal Article
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3. 1/f noise in amorphous Sb2Te3 for energy-efficient stochastic synapses in neuromorphic computing. (22nd October 2021)

Authors:: Kang, Deokyoung; Jang, Suyeon; Choi, Sejeung; Kim, Sangbum
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 12(2021)
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Record Type:: Journal Article
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4. 2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. (4th November 2019)

Authors:: Irekti, Mohamed-Reda; Lesecq, Marie; Defrance, Nicolas; Okada, Etienne; Frayssinet, Eric; Cordier, Yvon; Tartarin, Jean-Guy; De Jaeger, Jean-Claude
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 12(2019)
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Record Type:: Journal Article
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5. 2.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes. (26th May 2015)

Authors:: Gaimard, Q; Larrue, A; Triki, M; Adelin, B; Nguyen-Ba, T; Rouillard, Y; Gauthier-Lafaye, O; Teissier, R; Vicet, A
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 6(2015:Jun.)
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Record Type:: Journal Article
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6. 2.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes. (June 2015)

Authors:: Gaimard, Q; Larrue, A; Triki, M; Adelin, B; Nguyen-Ba, T; Rouillard, Y; Gauthier-Lafaye, O; Teissier, R; Vicet, A
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 6(2015:Jun.)
Page Start:: 46
Record Type:: Journal Article
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7. 25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study. (1st May 2023)

Authors:: Kashyap, Savita; Pandey, Rahul; Madan, Jaya
Journal:: Semiconductor science and technology
Issue:: Volume 38:Number 5(2023)
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Record Type:: Journal Article
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8. 3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth. (2nd November 2020)

Authors:: Díaz-Thomas, D A; Stepanenko, O; Bahriz, M; Calvez, S; Batte, T; Paranthoen, C; Patriarche, G; Tournié, E; Baranov, A N; Almuneau, G; Levallois, C; Cerutti, L
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 12(2020)
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Record Type:: Journal Article
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9. 3D characterization of nanowire devices with STEM based modes. (10th October 2019)

Authors:: Bender, Hugo; Bosch, Eric G T; Richard, Olivier; Mendez, David; Favia, Paola; Lazić, Ivan
Journal:: Semiconductor science and technology
Issue:: Volume 34:Number 11(2019)
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10. 3D FTO Inverse Opals@Hematite@TiO2 hierarchically structured Photoanode for Photoelectrochemical Water Splitting. (29th September 2017)

Authors:: Chai, Xiaobo; Zhang, Haifeng; Cheng, Chuanwei
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 11(2017:Nov.)
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Record Type:: Journal Article
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