25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study. (1st May 2023)
- Record Type:
- Journal Article
- Title:
- 25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study. (1st May 2023)
- Main Title:
- 25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study
- Authors:
- Kashyap, Savita
Pandey, Rahul
Madan, Jaya - Abstract:
- Abstract: Passivating contacts have recently considered as a superior carrier-selective contact approach for high-efficiency silicon-based photovoltaic devices. However, the conversion efficiencies of the silicon-based passivated emitter and rear cell (PERC) are limited by contact recombination losses that reduce their performance. Therefore, we investigated a new manufacturable silicide on oxide-based electrostatically doped (SILO-ED) carrier-selective contact to suppress the contact recombination losses and reduce the saturation current density ( j 0 ). For the first time, double side electrostatic doping is introduced to the PERC devices to form the carrier selective passivating contacts. First, a conventional PERC device was designed and the effects of surface recombination velocity (SRV) at both contacts were studied. After that, single and double SILO-ED based contacts are introduced into the device and a systematic analysis is performed to understand the tunneling phenomena and improve the conversion efficiency compared to existing PERC cells. The front SILO-ED based device with back contact SRV of 10 cm s −1 showed a power conversion efficiency of 25.4% with j 0 (14.3 fA·cm −2 ). In contrast, the double SILO-ED device delivered 25.7% conversion efficiency by further suppressing the j 0 to 11.8 fA·cm −2 by implementing SILO-ED approach with two different metal silicides such as erbium silicide (ErSi2 ) and palladium silicide (Pd2 Si) on front and rear contact surface.Abstract: Passivating contacts have recently considered as a superior carrier-selective contact approach for high-efficiency silicon-based photovoltaic devices. However, the conversion efficiencies of the silicon-based passivated emitter and rear cell (PERC) are limited by contact recombination losses that reduce their performance. Therefore, we investigated a new manufacturable silicide on oxide-based electrostatically doped (SILO-ED) carrier-selective contact to suppress the contact recombination losses and reduce the saturation current density ( j 0 ). For the first time, double side electrostatic doping is introduced to the PERC devices to form the carrier selective passivating contacts. First, a conventional PERC device was designed and the effects of surface recombination velocity (SRV) at both contacts were studied. After that, single and double SILO-ED based contacts are introduced into the device and a systematic analysis is performed to understand the tunneling phenomena and improve the conversion efficiency compared to existing PERC cells. The front SILO-ED based device with back contact SRV of 10 cm s −1 showed a power conversion efficiency of 25.4% with j 0 (14.3 fA·cm −2 ). In contrast, the double SILO-ED device delivered 25.7% conversion efficiency by further suppressing the j 0 to 11.8 fA·cm −2 by implementing SILO-ED approach with two different metal silicides such as erbium silicide (ErSi2 ) and palladium silicide (Pd2 Si) on front and rear contact surface. The champion double SILO-ED PERC solar cell delivered a conversion efficiency of 25.7% with an open circuit voltage ( V OC ) of 742 mV. The results reported in this study would help to develop superior passivating contact-based PERC solar cells for higher efficiencies. … (more)
- Is Part Of:
- Semiconductor science and technology. Volume 38:Number 5(2023)
- Journal:
- Semiconductor science and technology
- Issue:
- Volume 38:Number 5(2023)
- Issue Display:
- Volume 38, Issue 5 (2023)
- Year:
- 2023
- Volume:
- 38
- Issue:
- 5
- Issue Sort Value:
- 2023-0038-0005-0000
- Page Start:
- Page End:
- Publication Date:
- 2023-05-01
- Subjects:
- carrier selective contacts -- passivations -- poly-Si -- silicide -- solar cell
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6641/acc199 ↗
- Languages:
- English
- ISSNs:
- 0268-1242
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 26718.xml