2.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes. (June 2015)

• Record Type: Journal Article
• Authors: Gaimard, Q; Larrue, A; Triki, M; Adelin, B; Nguyen-Ba, T; Rouillard, Y; Gauthier-Lafaye, O; Teissier, R; Vicet, A
• Is Part Of: Semiconductor science and technology. Volume 30:Number 6(2015:Jun.)
• Page Start: 46
• Page End: 70
• Publication Date: 2015-06
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/6/065015
• Languages: English
• ISSNs: 0268-1242

Abstract

<abstract> <title>Abstract</title> <p>We report on the modeling, growth, processing, characterization and integration in a gas detection setup of side wall corrugated distributed feed-back antimonide diode lasers emitting at 2.28 and 2.67 <italic>μ</italic>m. The laser structures were grown by molecular beam epitaxy on GaSb substrate. Ridge lasers were fabricated from the grown wafers according to the following process: a second order Bragg grating was defined on the sides of the ridges by interferometric lithography, optical lithography and etched in a Cl-based inductively coupled plasma reactor. The devices exhibit a power reaching 40 mW, a side mode suppression ratio better than 28 dB and a tuning range of 3 nm at room temperature. One of these devices was successfully integrated in a tunable diode laser absorption spectroscopy setup, thus demonstrating that they are suitable for gas analysis.</p> </abstract>