Is Part Of: Superlattices and microstructures. Volume 99(2016) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Superlattices and microstructures. Volume 99(2016)

1. Aluminum-doped crystalline silicon and its photovoltaic application. (November 2016)

Authors:: Yuan, Shuai; Yu, Xuegong; Gu, Xin; Feng, Yan; Lu, Jinggang; Yang, Deren
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 158
Record Type:: Journal Article
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2. Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. (November 2016)

Authors:: Ren, C.X.; Rouet-Leduc, B.; Griffiths, J.T.; Bohacek, E.; Wallace, M.J.; Edwards, P.R.; Hopkins, M.A.; Allsopp, D.W.E.; Kappers, M.J.; Martin, R.W.; Oliver, R.A.
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 118
Record Type:: Journal Article
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3. Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN. (November 2016)

Authors:: Wang, Jianyu; Oshima, Yuichi; Cho, Yujin; Shi, Yi; Sekiguchi, Takashi
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 77
Record Type:: Journal Article
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4. Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs. (November 2016)

Authors:: Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 58
Record Type:: Journal Article
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5. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition. (November 2016)

Authors:: Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 54
Record Type:: Journal Article
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6. Control of carbon vacancy in SiC toward ultrahigh-voltage power devices. (November 2016)

Authors:: Kimoto, T.; Kawahara, K.; Zippelius, B.; Saito, E.; Suda, J.
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 151
Record Type:: Journal Article
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7. Deep level defects in N-rich and In-rich InxGa1−XN: in composition dependence. (November 2016)

Authors:: Gür, Emre; Akyol, Fatih; Krishnamoorthy, Sriram; Rajan, Siddharth; Ringel, Steven A.
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 67
Record Type:: Journal Article
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8. Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells. (November 2016)

Authors:: Moralejo, B.; Tejero, A.; Hortelano, V.; Martínez, O.; González, M.A.; Jiménez, J.
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 45
Record Type:: Journal Article
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9. Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon. (November 2016)

Authors:: Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 186
Record Type:: Journal Article
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10. Diffusion length and grain boundary recombination activity determination by means of induced current methods. (November 2016)

Authors:: Shabelnikova, Yana; Yakimov, Eugene
Journal:: Superlattices and microstructures
Issue:: Volume 99(2016)
Page Start:: 108
Record Type:: Journal Article
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