Aluminum-doped crystalline silicon and its photovoltaic application. (November 2016)
- Record Type:
- Journal Article
- Title:
- Aluminum-doped crystalline silicon and its photovoltaic application. (November 2016)
- Main Title:
- Aluminum-doped crystalline silicon and its photovoltaic application
- Authors:
- Yuan, Shuai
Yu, Xuegong
Gu, Xin
Feng, Yan
Lu, Jinggang
Yang, Deren - Abstract:
- Abstract: The impact of Al doping with the concentrations in the range of 0.01–0.1 ppmw on the performance of silicon wafers and solar cells is studied. The effective segregation coefficient of impurity k eff of Al in Si is obtained as 0.0029, which is calculated as 0.0027, supporting that Al should be totally ionized and occupy the substitutional sites in silicon and serve as the +1 dopant. It is found that the open-circuit voltages ( U oc ), short-circuit currents ( I sc ) and photo-electrical conversion efficiency of the Al-containing solar cells decrease with the increase of Al concentrations because of Al-related deep level recombination centers. The average absolute efficiency of Al-doped silicon solar cells is 0.34% lower than that of Ga-doped-only cells, and the largest difference can be about 0.62%. Moreover, Al doped silicon solar cells show no light induced efficiency degradation, and the average efficiency maintains above 17.78%, which is comparable at the final state to that of normal B-doped silicon solar cells. Highlights: The concentration range of Al doping is 0.01–0.1 ppmw. The k eff of Al in Si is obtained as 0.0029 Solar cell performance degrades with the increase of Al concentration. Al doping shows no light induced degradation effect. The efficiency of Al doped cell is comparable to that of degraded B doped cell.
- Is Part Of:
- Superlattices and microstructures. Volume 99(2016)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 99(2016)
- Issue Display:
- Volume 99, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 99
- Issue:
- 2016
- Issue Sort Value:
- 2016-0099-2016-0000
- Page Start:
- 158
- Page End:
- 164
- Publication Date:
- 2016-11
- Subjects:
- Crystalline silicon -- Al-doped -- Solar cell -- Light induced degradation
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2016.03.021 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 831.xml