Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon. (November 2016)

• Record Type: Journal Article
• Authors: Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren
• Is Part Of: Superlattices and microstructures. Volume 99(2016)
• Page Start: 186
• Page End: 191
• Publication Date: 2016-11
• Subjects: Oxygen-vacancy-related states -- Zirconium dioxide -- Metal-oxide-semiconductor devices -- Electroluminescence; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.03.007
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr 3+ ions. Analysis on the current-voltage characteristic of the ZrO2 -based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr 3+ ions brings about the EL emissions. Highlights: Defect-related EL has been realized from MOS devices with the ZrO2 films. The EL from the device with vacuum-annealed ZrO2 film is much stronger. The vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr 3+ . P-F conduction dominates the electron transportation at the EL-enabling voltages. The mechanism for the EL from the ZrO2 -based MOS devices is tentatively proposed.