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- 621.38152 16
- Semiconducteurs -- Périodiques 16
- Semiconductors -- Periodicals 16
- 2-bit/cell -- Drain-induced barrier lowering (DIBL) effects -- Device scaling -- Source-side injection -- Split-gate 1
- 3D NAND -- Poly-Si -- Body thickness -- Grain size -- Grain boundary trap -- Transient drain current -- Subthreshold-swing -- On-state current 1
- Active solid-state electronic device -- GaN HEMT -- High-power -- High-temperature -- Millimeter-wave frequency -- Scattering parameter measurements 1
- AlGaN/GaN heterostructure -- AlIn(Ga)N back barrier -- MOCVD -- HEMT 1
- Avalanche breakdown -- Unclamped inductive switching test -- Failure mechanism -- MOSFET -- IGBT -- Reliability 1
- Barrier height -- Compact form -- Threshold voltage -- Metal gate granularity -- NWFET -- Variability 1
- Bulk Si fin field-effect-transistors -- High temperature ion implantation -- Phosphorus -- Diffusion -- Drain-induced-barrier-lowering -- On-state current -- Off-state current 1