High-periphery GaN HEMT modeling up to 65 GHz and 200 °C. (February 2019)

• Record Type: Journal Article
• Authors: Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina
• Is Part Of: Solid-state electronics. Volume 152(2019)
• Page Start: 11
• Page End: 16
• Publication Date: 2019-02
• Subjects: Active solid-state electronic device -- GaN HEMT -- High-power -- High-temperature -- Millimeter-wave frequency -- Scattering parameter measurements; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.11.006
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A temperature-dependent characterization of a 1.5-mm GaN HEMT at a power dissipation of 5.1 W. An accurate millimeter-wave model for GaN HEMT up to 65 GHz. A thorough and systematic investigation of the impact of the temperature on the high-frequency GaN HEMT performance. Abstract: In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the potentialities of this kind of active solid-state electronic device at its best, the experiments are performed at extreme operating conditions. As a case study, we consider a large 0.25-μm GaN HEMT with a gate periphery of 1.5 mm, providing a high dissipated power of 5.1 W. The tested semiconductor device is characterized by measuring scattering parameters at high frequencies up to 65 GHz and at high ambient temperature up to 200 °C. To assess the impact of the thermal effects on high-frequency GaN HEMT performance, an equivalent circuit is analytically extracted and then used to determine the main RF figures of merit. The achieved experimental results show evidence that the increase of the temperature causes a significant degradation in device performance.