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You searched for: Journal Solid-state electronics Issue Volume 112(2015)Limit your search
- 621.38152 15
- Semiconducteurs -- Périodiques 15
- Semiconductors -- Periodicals 15
- 3-D compact modeling -- Junctionless nanowire -- Nanoscale triple-gate MOSFET -- Quantization effects -- Conformal mapping -- Symmetry test 1
- Ballistic -- Double-gate -- Partial gate -- MOSFET 1
- Band-to-band tunneling (BTBT) -- Analog performance -- Tunnel field effect transistor (TFET) 1
- CMOS -- MOSFET -- Downsizing -- FinFET -- High-k 1
- DTMOS -- UTBB -- SOI -- Back gate bias -- Electrical characterization 1
- FinFET – Junction-less transistor -- Surface roughness scattering -- Linearized Boltzmann transport equation -- Kubo-Greenwood transport formalism -- Electron mobility -- Semiconductor device simulation 1
- Magnetic field sensing -- MEMS resonators -- Quality factor -- Damping 1