Consistent low-field mobility modeling for advanced MOS devices. (October 2015)

• Record Type: Journal Article
• Authors: Stanojević, Zlatan; Baumgartner, Oskar; Filipović, Lidija; Kosina, Hans; Karner, Markus; Kernstock, Christian; Prause, Philipp
• Is Part Of: Solid-state electronics. Volume 112(2015)
• Page Start: 37
• Page End: 45
• Publication Date: 2015-10
• Subjects: FinFET – Junction-less transistor -- Surface roughness scattering -- Linearized Boltzmann transport equation -- Kubo-Greenwood transport formalism -- Electron mobility -- Semiconductor device simulation; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.02.008
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this paper we develop several extensions to semi-classical modeling of low-field mobility, which are necessary to treat planar and non-planar channel geometries on equal footing. We advance the state-of-the-art by generalizing the Prange-Nee model for surface roughness scattering to non-planar geometries, providing a fully numerical treatment of Coulomb scattering, and formulating the Kubo-Greenwood mobility model in a consistent, dimension-independent manner. These extensions allow meaningful comparison of planar and non-planar structures alike, and open the door to evaluating emerging device concepts, such as the FinFET or the junction-less transistor, on physical grounds.