Author/Creator: von Wenckstern, Holger - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator von Wenckstern, Holger

1. A DLTS study of a ZnO microwire, a thin film and bulk material. Issue 1633 (2014)

Authors:: Schmidt, Florian; Schlupp, Peter; Müller, Stefan; Dietrich, Christof Peter; von Wenckstern, Holger; Grundmann, Marius; Heinhold, Robert; Kim, Hyung-Suk; Allen, Martin Ward
Journal:: MRS proceedings
Issue:: Issue 1633:(2014)
Page Start:: 51
Record Type:: Journal Article
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2. Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1−x)2O3. (25th November 2021)

Authors:: Xia, Xinyi; Fares, Chaker; Ren, Fan; Hassa, Anna; von Wenckstern, Holger; Grundmann, Marius; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 10:Number 11(2021)
Page Start:
Record Type:: Journal Article
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3. All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals. (15th January 2015)

Authors:: Schlupp, Peter; Schein, Friedrich‐Leonhard; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 1:Number 1/2(2015:Jan.)
Page Start:: n/a
Record Type:: Journal Article
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4. All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride. (18th March 2021)

Authors:: Reinhardt, Anna; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 7:Number 4(2021)
Page Start:: n/a
Record Type:: Journal Article
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5. All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing. (11th September 2020)

Authors:: Lahr, Oliver; Bar, Michael S.; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 10(2020)
Page Start:: n/a
Record Type:: Journal Article
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6. Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74. (6th April 2020)

Authors:: Fares, Chaker; Xian, Minghan; Smith, David J.; McCartney, M. R.; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 9:Number 4(2020)
Page Start:
Record Type:: Journal Article
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7. Band Alignment of Al2O3 on α-(AlxGa1-x)2O3. (1st February 2022)

Authors:: Xia, Xinyi; Al-Mamun, Nahid Sultan; Fares, Chaker; Haque, Aman; Ren, Fan; Hassa, Anna; von Wenckstern, Holger; Grundmann, Marius; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 11:Number 2(2022)
Page Start:
Record Type:: Journal Article
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8. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (1st January 2019)

Authors:: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 6(6019)
Page Start:: P351
Record Type:: Journal Article
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9. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (20th June 2019)

Authors:: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 6(6019)
Page Start:: P351
Record Type:: Journal Article
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10. Band Offsets of Insulating & Semiconducting Oxides on (AlxGa1-x)O3. (3rd July 2019)

Authors:: Fares, Chaker; Kneiss, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko J; Ren, Fan; Hays, David; Gila, Brent P; Pearton, Stephen J.
Journal:: ECS transactions
Issue:: Volume 92:Number 7(2019)
Page Start:: 79
Record Type:: Journal Article
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