Band Alignment of Al2O3 on α-(AlxGa1-x)2O3. (1st February 2022)

• Record Type: Journal Article
• Authors: Xia, Xinyi; Al-Mamun, Nahid Sultan; Fares, Chaker; Haque, Aman; Ren, Fan; Hassa, Anna; von Wenckstern, Holger; Grundmann, Marius; Pearton, S. J.
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 2(2022)
• Publication Date: 2022-02-01
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac546f
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2 O3 deposited by Atomic Layer Deposition on α -(Alx Ga1-x )2 O3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α -(Alx Ga1-x )2 O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.