All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals. (15th January 2015)

• Record Type: Journal Article
• Authors: Schlupp, Peter; Schein, Friedrich‐Leonhard; von Wenckstern, Holger; Grundmann, Marius
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 1/2(2015:Jan.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-01-15
• Subjects: amorphous semiconducting oxides -- pulsed laser deposition -- pn‐diodes -- room‐temperature fabrication -- zinc‐tin‐oxide; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201400023
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Fully amorphous pn‐heterodiodes consisting of n ‐type zinc‐tin oxide and p‐type zinc‐cobalt oxide are discussed. All fabrication steps are conducted at room‐temperature except two baking steps within the photolithography for 90 s at 90 °C. Rectifications as high as six orders of magnitude are achieved and the ideality factors are between 1.2 and 2, depending on the diode design.