1. A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology. (February 2020) Authors: Xie, Xin; Zhu, Huilong; Bi, Dawei; Hu, Zhiyuan; Ren, JiangChuan; Zhang, Haineng; Zhang, Zhengxuan; Zou, Shichang Journal: Microelectronics and reliability Issue: Volume 105(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A rhodium-catalysed conjugate addition/cyclization cascade for the asymmetric synthesis of 2-amino-4H-chromenes. Issue 4 (7th January 2021) Authors: Chang, Zhiqian; Zhu, Huilong; Wu, Changhui; Xing, Junhao; Dou, Xiaowei Journal: Organic & biomolecular chemistry Issue: Volume 19:Issue 4(2020) Page Start: 785 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. (July 2016) Authors: Luo, Weichun; Yang, Hong; Wang, Wenwu; Xu, Yefeng; Tang, Bo; Ren, Shangqing; Xu, Hao; Wang, Yanrong; Qi, Luwei; Yan, Jiang; Zhu, Huilong; Zhao, Chao; Chen, Dapeng; Ye, Tianchun Journal: Microelectronics and reliability Issue: Volume 62(2016) Page Start: 70 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions. (February 2020) Authors: Hu, Rong; Xue, Jing; Wu, Xingping; Zhang, Yanbo; Zhu, Huilong; Sha, Gang Journal: Microscopy and microanalysis Issue: Volume 26:Number 1(2020) Page Start: 36 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Bulk FinFETs with body spacers for improving fin height variation. (August 2016) Authors: Wei, Xing; Zhu, Huilong; Zhang, Yanbo; Zhao, Chao Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 45 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Bulk FinFETs with body spacers for improving fin height variation. (August 2016) Authors: Wei, Xing; Zhu, Huilong; Zhang, Yanbo; Zhao, Chao Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 45 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Charge pumping test technique using CMOS ring oscillator on leakage issue. (October 2017) Authors: Liu, Yongbo; Zhu, Zhengyong; Zhu, Huilong; Wan, Guangxing; Li, Junfeng; Zhao, Chao Journal: Microelectronics journal Issue: Volume 68(2017) Page Start: 40 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Contact and slip behaviors of main cable of the long-span suspension bridge. (June 2022) Authors: Wang, Dagang; Zhu, Huilong; Xu, Wei; Ye, Jihong; Zhang, Dekun; Abdel Wahab, Magd Journal: Engineering failure analysis Issue: Volume 136(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs*Project supported by the National 02 IC Projects and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences. (April 2015) Authors: Xu, Miao; Yin, Huaxiang; Zhu, Huilong; Ma, Xiaolong; Xu, Weijia; Zhang, Yongkui; Zhao, Zhiguo; Luo, Jun; Yang, Hong; Li, Chunlong; Meng, Lingkuan; Hong, Peizhen; Xiang, Jinjuan; Gao, Jianfeng; Xu, Qiang; Xiong, Wenjuan; Wang, Dahai; Li, Junfeng; Zhao, Chao; Chen, Dapeng Journal: Journal of semiconductors Issue: Volume 36:Number 4(2015:Apr.) Page Start: 263 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off–state leakage. (5th December 2014) Authors: Zhang, Keke; Liu, Yunfei; Zhu, Huilong; Zhao, Chao; Ye, Tianchun; Yin, Haizhou Journal: International journal of nanotechnology Issue: Volume 12:Number 1/2(2015) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗