Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes. (6th January 2022)

• Record Type: Journal Article
• Authors: Mao, Wei; Xu, Shihao; Wang, Haiyong; Yang, Cui; Zhao, Shenglei; Chen, Jiabo; Zhang, Yachao; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
• Is Part Of: Applied physics express. Volume 15:Number 1(2022)
• Publication Date: 2022-01-06
• Subjects: Schottky barrier diode -- AlGaN/GaN -- oxygen plasma treatment -- barrier height inhomogeneity -- current collapse; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac44cb
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device treated by oxygen plasma has a relatively more inhomogeneous barrier height.