Author/Creator: Yang, Jian-qun - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Yang, Jian-qun

1. A compact circuit-level model for single-event burnout in SiC power MOSFET devices. (1st December 2022)

Authors:: Shen, Pei; Wang, Ying; Li, Xing-Ji; Yang, Jian-qun; Cao, Fei
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number 12(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Graded-channel junctionless dual-gate MOSFETs for radiation tolerance. (2nd November 2017)

Authors:: Wang, Ying; Shan, Chan; Liu, Chao-ming; Li, Xing-ji; Yang, Jian-qun; Tang, Yan; Bao, Meng-tian; Cao, Fei
Journal:: Japanese journal of applied physics
Issue:: Volume 56:Number 12(2017)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Improved interface characteristics of Mo/4H-SiC schottky contact. (November 2021)

Authors:: Chen, Ke-han; Cao, Fei; Yang, Zhao-yang; Li, Xing-ji; Yang, Jian-qun; Shi, Ding-kun; Wang, Ying
Journal:: Solid-state electronics
Issue:: Volume 185(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer. (June 2021)

Authors:: Shi, Ding-kun; Wang, Ying; Wu, Xue; Yang, Zhao-yang; Li, Xing-ji; Yang, Jian-qun; Cao, Fei
Journal:: Solid-state electronics
Issue:: Volume 180(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC. (December 2021)

Authors:: Xu, Yang-xi; Sui, Jin-chi; Cao, Fei; Li, Xing-ji; Yang, Jian-qun; Wang, Ying
Journal:: Solid-state electronics
Issue:: Volume 186(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer. (March 2023)

Authors:: Shen, Pei; Wang, Ying; Li, Xing-Ji; Yang, Jian-qun; Zheng, Liang
Journal:: Microelectronics and reliability
Issue:: Volume 142(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. Single-event burnout hardening of RC-IGBT with the raised N-buffer layer. (December 2022)

Authors:: Zhang, Xiao-Dong; Wang, Ying; Bao, Meng-Tian; Li, Xing-ji; Yang, Jian-qun; Cao, Fei
Journal:: Microelectronics and reliability
Issue:: Volume 139(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗