Single-event burnout hardening of RC-IGBT with the raised N-buffer layer. (December 2022)

• Record Type: Journal Article
• Authors: Zhang, Xiao-Dong; Wang, Ying; Bao, Meng-Tian; Li, Xing-ji; Yang, Jian-qun; Cao, Fei
• Is Part Of: Microelectronics and reliability. Volume 139(2022)
• Publication Date: 2022-12
• Subjects: RC-IGBT -- Single-event burnout -- Snapback; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114808
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper proposes a reverse conducting insulated gate bipolar transistors (RC-IGBT) structure with a raised N-buffer layer (RNB-IGBT) to improve the single-event burnout (SEB) robustness. The electrical and radiation properties of the structure were verified by TCAD simulations. At the same snapback voltage of 0.22 V and the liner energy transfer (LET) of 60 MeVcm 2 /mg conditions, the SEB threshold of RNB-IGBT is improved by 52 % compared to that of conventional RC-IGBT. This result indicates that the raised N-buffer layer of the RNB-IGBT can effectively reduce impact ionization, so it can suppress excessive heat concentration and avoid induce SEB.