Graded-channel junctionless dual-gate MOSFETs for radiation tolerance. (2nd November 2017)

• Record Type: Journal Article
• Authors: Wang, Ying; Shan, Chan; Liu, Chao-ming; Li, Xing-ji; Yang, Jian-qun; Tang, Yan; Bao, Meng-tian; Cao, Fei
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 12(2017)
• Publication Date: 2017-11-02
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.124201
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this work, we investigate the bipolar gain and collected charge under heavy ion irradiation in graded-channel junctionless dual-gate MOSFETs. The transient response of the graded-channel device is compared with that of the conventional uniform-channel device. We present the different doping levels on the channel around the source and show that the bipolar gain and collected charge of the graded-channel device are lower than those of the uniform-channel device, owing to the lower doping level around the source in the channel, which induces lower floating body effects. We consider the effect of changing the doping level in a graded-channel device.