1. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016) Authors: Franco, J.; Kaczer, B.; Vais, A.; Alian, A.; Arimura, H.; Putcha, V.; Sioncke, S.; Waldron, N.; Zhou, D.; Nyns, L.; Mitard, J.; Witters, L.; Heyns, M.; Groeseneken, G.; Collaert, N.; Linten, D.; Thean, A. Journal: MRS advances Issue: Volume 1:Issue 49(2016) Page Start: 3329 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Processing Technologies for Advanced Ge Devices. (1st January 2017) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Processing Technologies for Advanced Ge Devices. (5th December 2016) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET. (April 2018) Authors: Yamaguchi, S.; Witters, L.; Mitard, J.; Eneman, G.; Hellings, G.; Hikavyy, A.; Loo, R.; Horiguchi, N. Journal: Microelectronics and reliability Issue: Volume 83(2018) Page Start: 157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications. (February 2016) Authors: Ritzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H.-J.; Son, Y.; Noh, K.B.; Fazan, P.; Lee, S.-G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A.V.-Y. Journal: Materials science in semiconductor processing Issue: Volume 42:Part 2(2016:Feb.) Page Start: 255 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Understanding and optimizing the floating body retention in FDSOI UTBOX. (March 2016) Authors: Aoulaiche, M.; Simoen, E.; Caillat, C.; Witters, L.; Bourdelle, K.K.; Nguyen, B.-Y.; Martino, J.; Claeys, C.; Fazan, P.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Understanding and optimizing the floating body retention in FDSOI UTBOX. (March 2016) Authors: Aoulaiche, M.; Simoen, E.; Caillat, C.; Witters, L.; Bourdelle, K.K.; Nguyen, B.-Y.; Martino, J.; Claeys, C.; Fazan, P.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Use of high order precursors for manufacturing gate all around devices. (1st November 2017) Authors: Hikavyy, A.; Zyulkov, I.; Mertens, H.; Witters, L.; Loo, R.; Horiguchi, N. Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 24 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗