1. 15–40 GHz wideband CMOS mixer. Issue 24 (1st November 2013) Authors: Cao, Jia; Li, Zhiqun; Li, Qin; Wang, Zhigong Journal: Electronics letters Issue: Volume 49:Issue 24(2013) Page Start: 1537 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 20.8–51 GHz highly balanced CMOS balun. Issue 17 (1st August 2017) Authors: Yang, Geliang; Wang, Keping; Wang, Zhigong Journal: Electronics letters Issue: Volume 53:Issue 17(2017) Page Start: 1202 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 3.6‐8.1 GHz CMOS balun with 1.8° in‐band phase difference by using capacitive balance compensation technique. Issue 4 (2nd January 2020) Authors: Yang, Geliang; Tang, Kai; Wang, Zhigong Journal: Microwave and optical technology letters Issue: Volume 62:Issue 4(2020:Apr.) Page Start: 1548 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 30–50 GHz high‐gain CMOS UWB LNA. Issue 25 (1st December 2013) Authors: Yang, Ge Liang; Liu, Faen; Muhammad, Amin; Wang, Zhigong Journal: Electronics letters Issue: Volume 49:Issue 25(2013) Page Start: 1622 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. 3‐13 GHz Q‐enhanced low noise amplifier with optimized inductors utilizing in‐phase current returning path technique. Issue 7 (4th March 2019) Authors: Wang, Keping; Yang, Geliang; Wang, Zhigong Journal: Microwave and optical technology letters Issue: Volume 61:Issue 7(2019:Jul.) Page Start: 1712 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. 60 GHz broadband variable gain mixer using positive feedback in 65 nm CMOS. Issue 19 (4th September 2015) Authors: Wang, Chong; Li, Zhiqun; Li, Qin; Wang, Zhigong Journal: Electronics letters Issue: Volume 51:Issue 19(2015) Page Start: 1503 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. 60 GHz low‐power LNA with high gm × Rout transconductor stages in 65 nm CMOS. Issue 4 (1st February 2017) Authors: Li, Zhiqun; Wang, Chong; Li, Qin; Wang, Zhigong Journal: Electronics letters Issue: Volume 53:Issue 4(2017) Page Start: 279 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. 69–78 GHz ESD‐protected SiGe BiCMOS PA with 30 dB automatic level control for mm‐wave 5G applications. Issue 22 (1st November 2018) Authors: Wang, Keping; Qiu, Lei; Wang, Zhigong Journal: Electronics letters Issue: Volume 54:Issue 22(2018) Page Start: 1286 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. A 26–47.9 GHz ultrawideband CMOS dual injection‐locked frequency divider. Issue 9 (September 2014) Authors: Liu, Faen; Wang, Zhigong; Li, Zhiqun; Li, Qin; Yang, Geliang Journal: Microwave and optical technology letters Issue: Volume 56:Issue 9(2014:Sep.) Page Start: 2126 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. A 3.16–7 GHz transformer-based dual-band CMOS VCO*Project supported by the National High Technology Research and Development Program of China (No. 2011AA10305) and the National Natural Science Foundation of China (No. 60901012). (March 2015) Authors: Li, Zhu; Wang, Zhigong; Li, Zhiqun; Li, Qin; Liu, Faen Journal: Journal of semiconductors Issue: Volume 36:Number 3(2015:Mar.) Page Start: 555 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗