60 GHz low‐power LNA with high gm × Rout transconductor stages in 65 nm CMOS. Issue 4 (1st February 2017)

• Record Type: Journal Article
• Authors: Li, Zhiqun; Wang, Chong; Li, Qin; Wang, Zhigong
• Is Part Of: Electronics letters. Volume 53:Issue 4(2017)
• Page Start: 279
• Page End: 281
• Publication Date: 2017-02-01
• Subjects: low‐power electronics -- low noise amplifiers -- CMOS analogue integrated circuits; transconductor stage -- low‐power low noise amplifier -- CMOS technology -- cascode common source‐common source structure -- current‐reused CS‐CS structure -- CS transistor -- DC current -- equivalent transconductance -- output resistance -- low‐power LNA circuits -- average noise figure -- power dissipation -- power supply -- frequency 60 GHz -- size 65 nm -- bandwidth 16.7 GHz -- frequency 48 GHz to 64.7 GHz -- power 9.6 mW -- voltage 1 V -- noise figure 6.1 dB; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.4061
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : This Letter presents a 60 GHz low power low noise amplifier (LNA) with high g m × R out transconductor stages in a 65‐nm complementary metal oxide semiconductor (CMOS) technology. Different from the cascode and current‐reused common source–common source (CS–CS) structure, the new transconductor proposed in this Letter comprises a CS transistor whose DC current is shared by other two transistors. With this configuration, the equivalent transconductance, g m and output resistance, R out of the transconductor are both high while its noise figure is deteriorated slightly comparing with CS structure, making it suitable for low‐power LNA circuits. From the measurement results, the LNA gets a gain of 13.4 ± 1.5 dB and 3‐dB bandwidth of 16.7 GHz (48–64.7 GHz). The average noise figure of the LNA is 6.1 dB with a power dissipation of 9.6 mW under 1 V power supply.