30–50 GHz high‐gain CMOS UWB LNA. Issue 25 (1st December 2013)
- Record Type:
- Journal Article
- Title:
- 30–50 GHz high‐gain CMOS UWB LNA. Issue 25 (1st December 2013)
- Main Title:
- 30–50 GHz high‐gain CMOS UWB LNA
- Authors:
- Yang, Ge Liang
Liu, Faen
Muhammad, Amin
Wang, Zhigong - Abstract:
- Abstract : A 30–50 GHz CMOS ultra‐wideband (UWB) low‐noise amplifier (LNA) with a flat high power gain ( S 21 ), along with a flat low‐noise figure (NF) is demonstrated for the Atacama large millimetre array (ALMA) band‐1 (31.3–45 GHz) system applications. The high S 21 and low NF are achieved because the triple‐well transistors are utilised with their respective source and body terminals connected together. Furthermore, the bandwidth extension and gain flatness is achieved due to the careful design of the inductive‐peaking networks. The LNA has a measured S 21 of 21.5 ± 1.5 dB, a minimum NF (NFmin ) of 3.8 dB at 32.5 GHz, an average NF (NFavg ) of 4.67 dB over the range of 30–50 GHz and an input third‐order intercept point (IIP3) of 0 dBm, with a DC power consumption of 20.4 mW at 1.2 V supply. The proposed LNA outperforms all the reported commercial standard CMOS Q ‐band LNAs, with the highest gain bandwidth product and highest IIP3 suitable for the ALMA band‐1 system applications.
- Is Part Of:
- Electronics letters. Volume 49:Issue 25(2013)
- Journal:
- Electronics letters
- Issue:
- Volume 49:Issue 25(2013)
- Issue Display:
- Volume 49, Issue 25 (2013)
- Year:
- 2013
- Volume:
- 49
- Issue:
- 25
- Issue Sort Value:
- 2013-0049-0025-0000
- Page Start:
- 1622
- Page End:
- 1623
- Publication Date:
- 2013-12-01
- Subjects:
- CMOS analogue integrated circuits -- low noise amplifiers -- power consumption -- radioastronomical techniques -- ultra wideband technology
high‐gain CMOS UWB LNA -- CMOS ultra‐wideband low‐noise amplifier -- voltage 1.2 V -- power 20.4 mW -- frequency 30 GHz to 50 GHz -- radio astronomical array -- ALMA band‐1 system applications -- gain bandwidth -- CMOS Q‐band LNA -- DC power consumption -- IIP3 -- input third‐order intercept point -- inductive‐peaking networks design -- gain flatness -- bandwidth extension -- body terminals -- triple‐well transistors -- Atacama large millimetre array -- NF -- flat low‐noise figure -- flat high power gain
Electronics -- Periodicals
621.381 - Journal URLs:
- http://digital-library.theiet.org/content/journals/el ↗
http://estar.bl.uk/cgi-bin/sciserv.pl?collection=journals&journal=00135194 ↗
https://ietresearch.onlinelibrary.wiley.com/loi/1350911x ↗
http://www.theiet.org/ ↗ - DOI:
- 10.1049/el.2013.2625 ↗
- Languages:
- English
- ISSNs:
- 0013-5194
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 3705.060000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 17375.xml