1. A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior. (4th December 2019) Authors: Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 59:Number SC(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Direct imprinting of indium–tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor. (17th January 2018) Authors: Haga, Ken-ichi; Kamiya, Yuusuke; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 57:Number 2(2018)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition. (1st November 2022) Authors: Sasaki, Keisuke; Mohit, ; Hashiguchi, Sho; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 61:Number SN(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition. (1st November 2022) Authors: Sasaki, Keisuke; Mohit, ; Hashiguchi, Sho; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 61:Number SN(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application. (5th May 2020) Authors: Mohit, ; Haga, Ken-ichi; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 59:Number SM(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment. (1st July 2022) Authors: Mohit, ; Wen, Yuli; Hara, Yuki; Migita, Shinji; Ota, Hiroyuki; Morita, Yukinori; Ohdaira, Keisuke; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 61:Number SH(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process. Issue 10 (6th May 2022) Authors: Mohit, ; Murakami, Tatsuya; Tokumitsu, Eisuke Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor. Journal: Physica status solidi Issue: Volume 16:Issue 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Fabrication of MoS2 thin films on oxide‐dielectric‐covered substrates by chemical solution process. Issue 2 (15th November 2016) Authors: Kim, Joonam; Higashimine, Koichi; Haga, Ken‐ichi; Tokumitsu, Eisuke Journal: Physica status solidi Issue: Volume 254:Issue 2(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Ferroelectric-gated variable-area capacitors with large capacitance tuning ratio using Ce-doped HfO2 film for both gate insulator and capacitor layer. (1st April 2023) Authors: Miyasako, Takaaki; Yoneda, Shingo; Hosokura, Tadasu; Kimura, Masahiko; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Ferroelectric-gated variable-area capacitors with large capacitance tuning ratio using Ce-doped HfO2 film for both gate insulator and capacitor layer. (9th March 2023) Authors: Miyasako, Takaaki; Yoneda, Shingo; Hosokura, Tadasu; Kimura, Masahiko; Tokumitsu, Eisuke Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗