Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition. (1st November 2022)

• Record Type: Journal Article
• Authors: Sasaki, Keisuke; Mohit, ; Hashiguchi, Sho; Tokumitsu, Eisuke
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SN(2022)
• Publication Date: 2022-11-01
• Subjects: ferroelectric thin film -- chemical solution deposition -- HfO2 -- Hf–Zr–O (HZO); Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac7fda
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Y-doped Hf–Zr–O (Y-HZO) films have been prepared by chemical solution deposition. It is shown that good ferroelectric property can be obtained for the Y-HZO film with a Y concentration of 3.2% after 800 °C crystallization annealing at a reduced pressure of 50 Pa. It is also demonstrated that the reduced pressure pre-annealing at temperatures as low as 400 °C is effective to obtain good ferroelectric properties, regardless of the crystallization annealing ambient. This is presumably because the pre-annealing under reduced pressure promotes the formation of nuclei in the orthorhombic phase.