1. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016) Authors: Franco, J.; Kaczer, B.; Vais, A.; Alian, A.; Arimura, H.; Putcha, V.; Sioncke, S.; Waldron, N.; Zhou, D.; Nyns, L.; Mitard, J.; Witters, L.; Heyns, M.; Groeseneken, G.; Collaert, N.; Linten, D.; Thean, A. Journal: MRS advances Issue: Volume 1:Issue 49(2016) Page Start: 3329 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors. Issue 11 (25th July 2014) Authors: Bühler, R.; Eneman, G.; Favia, P.; Bender, H.; Vincent, B.; Hikavyy, A.; Loo, R.; Martino, J. A.; Claeys, C.; Simoen, E.; Collaert, N.; Thean, A.; Pizzini, Sergio; Kissinger, Gudrun Journal: Physica status solidi Issue: Volume 11:Issue 11/12(2014) Page Start: 1578 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology. (February 2017) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Carin, R.; Veloso, A.; Collaert, N.; Thean, A. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 102 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results. (February 2017) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Carin, R.; Veloso, A.; Collaert, N.; Thean, A. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 109 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents. Issue 86 (14th September 2015) Authors: Delabie, A.; Caymax, M.; Groven, B.; Heyne, M.; Haesevoets, K.; Meersschaut, J.; Nuytten, T.; Bender, H.; Conard, T.; Verdonck, P.; Van Elshocht, S.; De Gendt, S.; Heyns, M.; Barla, K.; Radu, I.; Thean, A. Journal: Chemical communications Issue: Volume 51:Issue 86(2015) Page Start: 15692 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (1st January 2015) Authors: Jiang, S.; Merckling, C.; Moussa, A.; Waldron, N.; Caymax, M.; Vandervorst, W.; Collaert, N.; Barla, K.; Langer, R.; Thean, A.; Seefeldt, M.; Heyns, M. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 7(2015) Page Start: N83 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (22nd May 2015) Authors: Jiang, S.; Merckling, C.; Moussa, A.; Waldron, N.; Caymax, M.; Vandervorst, W.; Collaert, N.; Barla, K.; Langer, R.; Thean, A.; Seefeldt, M.; Heyns, M. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 7(2015) Page Start: N83 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Processing Technologies for Advanced Ge Devices. (1st January 2017) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Processing Technologies for Advanced Ge Devices. (5th December 2016) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗