Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents. Issue 86 (14th September 2015)

• Record Type: Journal Article
• Authors: Delabie, A.; Caymax, M.; Groven, B.; Heyne, M.; Haesevoets, K.; Meersschaut, J.; Nuytten, T.; Bender, H.; Conard, T.; Verdonck, P.; Van Elshocht, S.; De Gendt, S.; Heyns, M.; Barla, K.; Radu, I.; Thean, A.
• Is Part Of: Chemical communications. Volume 51:Issue 86(2015)
• Page Start: 15692
• Page End: 15695
• Publication Date: 2015-09-14
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1039/c5cc05272f
• Languages: English
• ISSNs: 1359-7345

Abstract

Abstract : We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2 S precursors. Abstract : We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2 S precursors. Nanocrystalline WS2 layers with a two-dimensional structure can be obtained at low deposition temperatures (300–450 °C) without using a template or anneal.