Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results. (February 2017)

• Record Type: Journal Article
• Authors: Boudier, D.; Cretu, B.; Simoen, E.; Carin, R.; Veloso, A.; Collaert, N.; Thean, A.
• Is Part Of: Solid-state electronics. Volume 128(2017)
• Page Start: 109
• Page End: 114
• Publication Date: 2017-02
• Subjects: Triple-gate -- FinFET -- Low frequency noise -- 1/f noise -- Generation recombination -- Traps; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.013
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Low frequency noise measurements are used as a non-destructive diagnostic tool in order to evaluate the quality of the gate oxide and the silicon film of sub-10 nm triple-gate Silicon-on-Insulator (SOI) FinFETs. It was found that the carrier number fluctuations explain the 1/ f noise in moderate inversion for n- and p-FinFETs, which allows estimating the gate oxide trap densities. The noise spectroscopy with respect to temperature (study of the generation-recombination noise) led to the identification of the traps located in the transistors silicon film.