1. Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams. Issue 4 (27th December 2017) Authors: Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji Journal: Physica status solidi Issue: Volume 255:Issue 4(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion. (11th April 2019) Authors: Chen, Jun; Yi, Wei; Kimura, Takashi; Takashima, Shinya; Edo, Masaharu; Sekiguchi, Takashi Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. (13th November 2017) Authors: Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu Journal: Applied physics express Issue: Volume 10:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes. (23rd April 2021) Authors: Shiojima, Kenji; Tanaka, Ryo; Takashima, Shinya; Ueno, Katsunori; Edo, Masaharu Journal: Japanese journal of applied physics Issue: Volume 60:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations. (11th April 2016) Authors: Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations. (17th February 2017) Authors: Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun Journal: Japanese journal of applied physics Issue: Volume 56:Number 3(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs. (3rd April 2019) Authors: Tanaka, Ryo; Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Edo, Masaharu; Nakagawa, Kiyokazu Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate. (15th May 2017) Authors: Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Shimizu, Mitsuaki; Takahashi, Tokio; Ishibashi, Shoji; Uedono, Akira; Chichibu, Shigefusa F. Journal: Applied physics express Issue: Volume 10:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Retraction: "Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations". (30th September 2016) Authors: Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun Journal: Japanese journal of applied physics Issue: Volume 55:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam. Issue 12 (17th August 2015) Authors: Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Kudo, Hiroshi; Naramoto, Hiroshi; Ishibashi, Shoji Journal: Physica status solidi Issue: Volume 252:Issue 12(2015:Dec.) Page Start: 2794 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗